Development of indium tin oxide thin film toluene sensor

被引：31
|
作者：
Vaishnav, V. S. [1 ]
Patel, S. G. [2 ]
Panchal, J. N. [1 ]
机构：
[1] Sardar Patel Univ, Dept Elect, Anand 388120, Gujarat, India
[2] Sardar Patel Univ, Dept Phys, Anand 388120, Gujarat, India
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2015年 / 210卷
关键词：
Indium tin oxide (ITO); Semiconductor oxide; Volatile organic compounds (VOCs); Toluene (C7H8); Gas/vapour sensors; VOLATILE ORGANIC-COMPOUNDS; SEMICONDUCTOR GAS SENSORS; FABRICATION; BENZENE; NO;
D O I：
10.1016/j.snb.2014.11.075
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Thin films of indium tin oxide (ITO) were deposited using thermal evaporation technique. Various sets of thin film sensors were prepared under the optimized fabrication conditions. The response of the sensors to the quantitative presence of toluene was studied. The sensing mechanism to explain the redox reactions on the surface of ITO film was developed. The films were coated with thin layers of metals and oxide to enhance the performance for the sensitive and selective detection of toluene. The response of toluene sensor in the detection range 10-1000 ppm was examined. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：165 / 172
页数：8
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