Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

被引：36
|
作者：
Jang, HW
Kim, KH
Kim, JK
Hwang, SW
Yang, JJ
Lee, KJ
Son, SJ
Lee, JL [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea
[2] Knowledgeon Inc, Iksan 570210, Chunbuk, South Korea
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 12期
关键词：
D O I：
10.1063/1.1403660
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a low-resistance thermally stable ohmic contact on p-type GaN using a promising contact scheme of Pd/Ni. Specific contact resistance as low as 5.7x10(-5) Omega cm(2) was obtained from the Pd (30 Angstrom)/Ni (70 Angstrom) contact annealed at 500 degreesC under an oxidizing ambient. NiO that formed at the surface prevented Pd atoms from outdiffusing, promoting the formation of Pd gallides, Ga2Pd5 and Ga5Pd. This reaction produces Ga vacancies below the contact, leading to enhancement of the thermal stability as well as reduction of the contact resistivity. (C) 2001 American Institute of Physics.
引用
收藏
页码：1822 / 1824
页数：3
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