Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

被引：28
|
作者：
Lindberg, H [1 ]
Sadeghi, M
Westlund, M
Wang, SM
Larsson, A
Strassner, M
Marcinkevicius, S
机构：
[1] Chalmers Univ Technol, Photon Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] Royal Inst Technol, Lab Mat & Semicond Phys, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden
[3] Royal Inst Technol, Lab Opt Photon & Quantum Elect, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden
来源：
OPTICS LETTERS | 2005年 / 30卷 / 20期
关键词：
D O I：
10.1364/OL.30.002793
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 mu m thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW. (c) 2005 Optical Society of America
引用
收藏
页码：2793 / 2795
页数：3
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