High reflectivity multilayer for He-II radiation at 30.4 nm

被引：18

作者：

Zhu, Jingtao ^{[1
]}

Wang, Zhanshan ^{[1
]}

Zhang, Zhong ^{[1
]}

Wang, Fengli ^{[1
]}

Wang, Hongchang ^{[1
]}

Wu, Wenjuan ^{[1
]}

Zhang, Shumin ^{[1
]}

Xu, Da ^{[1
]}

Chen, Lingyan ^{[1
]}

Zhou, Hongjun ^{[2
]}

Huo, Tonglin ^{[2
]}

Cui, Mingqi ^{[3
]}

Zhao, Yidong ^{[3
]}

机构：

[1] Tongji Univ, Inst Precis Opt Engn, Shanghai 200092, Peoples R China

[2] Univ Sci & Technol, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

[3] Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100039, Peoples R China

来源：

APPLIED OPTICS | 2008年 / 47卷 / 13期

关键词：

D O I：

10.1364/AO.47.00C310

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SiC/Mg and B4C/Mo/Si multilayers were designed for He-II radiation at 30.4 nm. These multilayers were prepared by use of a direct current magnetron sputtering system and measured at the National Synchrotron Radiation Laboratory, China. The measured reflectivities were 38.0% for the SiC/Mg multilayer at an incident angle of 12 deg and 32.5% for the B4C/Mo/Si multilayer at 5 deg, respectively. A dual-function multilayer mirror was also designed by use of the aperiodic SiC/Mg multilayer. Annealing experiments were performed to investigate the thermal stability of the SiC/Mg multilayer. The interface of the SiC/Mg multilayer before and after annealing was studied by electron-induced x-ray emission spectra, which evidences the absence of thermal reaction products at the interfaces after annealing. (c) 2008 Optical Society of America.

引用

页码：C310 / C314

页数：5

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