Measurement of sheet resistance of cross microareas using a modified van der Pauw method

被引：25

作者：

Sun, YC ^{[1
]}

Shi, JS ^{[1
]}

Meng, QH ^{[1
]}

机构：

[1] YUNNAN NORMAL UNIV,KUNMING 650092,PEOPLES R CHINA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 05期

关键词：

D O I：

10.1088/0268-1242/11/5/025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sheet resistance of a cross microarea with a size as small as 120 mu m was determined by using a modified van der Pauw method, in which the tip positions of four probes were controlled at the peripheral areas outside a demarcation curve, as shown in the text, by direct inspection through a microscope with a magnification of 4 x 20. It is not necessary to prepare four metallized electrodes for setting probes. The measurement results are independent of the wanderings of probes and it is unnecessary to determine the precise positions of probes in order to make corrections for the boundary effect. These conclusions have been proved in this paper by using the finite element method (FEM) and have been confirmed by the experimental determination of sheet resistance for several boron-doped cross microareas isolated by p-n junctions on an n-type silicon wafer.

引用

页码：805 / 811

页数：7

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