Dielectric properties of Bi4-xLaxTi3O12 (0 ≤ x ≤ 2) ceramics

被引：13

作者：

Hou, RZ ^{[1
]}

Chen, XM ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF ELECTROCERAMICS | 2003年 / 10卷 / 03期

关键词：

Bi4-xLaxTi3O12; ceramics; dielectric properties; phase transition; CRYSTAL;

D O I：

10.1023/B:JECR.0000011218.75520.d3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dielectric properties of the Bi4-xLax Ti3O12 (0 less than or equal to x less than or equal to 2) ceramics were characterized and discussed together with the P-E relation ( polarization vs. electric field). With increasing x, the P-E relation changed from normal ferroelectric hysteresis loops to pure linear relation, which indicated that La3+ substitution for Bi3+ in Bi4Ti3O12 induced a phase transition from ferroelectric to paraelectric state at ambient temperature. Low loss dielectric ceramics with temperature stable dielectric constant were obtained for x > 1.2 in Bi4-xLax Ti3O12 at 1 MHz. And the loss increased in all the compositions when the ceramics were measured at microwave frequencies.

引用

页码：203 / 207

页数：5

共 50 条

[31] Effects of bottom electrodes (Pt and IrO2) on physical and electrical properties of Bi4-xLaxTi3O12 thin film
Yang, W.S.
Kim, N.K.
Yeom, S.J.
Kweon, S.Y.
Choi, E.S.
Roh, J.S.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (10): : 6008 - 6011
[32] Temperature-dependent fatigue behaviors of ferroelectric Bi4-xLaxTi3O12 thin films
Wang, Y.
Zhu, C.
Wu, X. M.
Liu, J. -M.
INTEGRATED FERROELECTRICS, 2006, 79 (01) : 37 - 45
[33] Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x=0.75) thin films
Kim, HS
Oh, SH
Suh, JH
Park, CG
MULTISCALE PHENOMENA IN MATERIALS-EXPERIMENTS AND MODELING RELATED TO MECHANICAL BEHAVIOR, 2003, 779 : 165 - 170
[34] Effects of Bi2O3 seeding layer on crystallinity and electrical properties of CSD-derived Bi4-xLaxTi3O12 ferroelectric thin films
Hayashi, T
Togawa, D
Sakamoto, W
Hirano, S
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (06) : 1621 - 1624
[35] Effects of bottom electrodes (Pt and IrO2) on physical and electrical properties of Bi4-xLaxTi3O12 thin film
Yang, WS
Kim, NK
Yeom, SJ
Kweon, SY
Choi, ES
Roh, JS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (10): : 6008 - 6011
[36] Electronic structures of Bi4-xLaxTi3O12 and Bi4ZrxTi3-xO12 single crystals studied by soft-X-ray spectroscopy
Higuchi, T
Moriuchi, Y
Noguchi, Y
Miyayama, M
Shin, S
Tsukamoto, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9B): : 6226 - 6229
[37] Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing
Chon, U
Kim, KB
Jang, HM
APPLIED PHYSICS LETTERS, 2001, 79 (15) : 2450 - 2452
[38] Correlation between internal stress and ferroelectric fatigue in Bi4-xLaxTi3O12 thin films
Lee, JK
Kim, CH
Suh, HS
Hong, KS
APPLIED PHYSICS LETTERS, 2002, 80 (19) : 3593 - 3595
[39] La content and size effects on crystal structure and phase transition of Bi4-xLaxTi3O12 nanocrystals
Zhu, Kerong
Zhang, M. -S.
Deng, Yu
Zhou, Jianxin
PHYSICA B-CONDENSED MATTER, 2010, 405 (05) : 1388 - 1393
[40] Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi4-xLaxTi3O12 capacitors
Furukawa, T
Kuroiwa, T
Fujisaki, Y
Sato, T
Ishiwara, H
INTEGRATED FERROELECTRICS, 2003, 59 (59) : 1437 - 1443

← 1 2 3 4 5 →