Surface plasmon-phonon polaritons in GaAs

被引：10
|
作者：
Melentev, G. A. [1 ]
Shalygin, V. A. [1 ]
Firsov, D. A. [1 ]
Vinnichenko, M. Ya [1 ]
Vorobjev, L. E. [1 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, Dept Phys Semicond & Nanoelect, 29 Polytech Skaya St, St Petersburg 195251, Russia
来源：
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷
关键词：
D O I：
10.1088/1742-6596/917/6/062038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate surface plasmon-phonon polaritons in n-doped GaAs with the aim to obtain terahertz radiation emission. Dispersion of the surface plasmon-phonon polaritons is theoretically simulated taking into account contributions of the lattice and electron subsystems to the dielectric permittivity of n-GaAs. It is shown that regular grating at outer surface of GaAs provides a possibility to convert surface plasmon-phonon polaritons into terahertz photons and vice versa.
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页数：4
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