Surface plasmon-phonon polaritons in GaAs

被引：10

作者：

Melentev, G. A. ^{[1
]}

Shalygin, V. A. ^{[1
]}

Firsov, D. A. ^{[1
]}

Vinnichenko, M. Ya ^{[1
]}

Vorobjev, L. E. ^{[1
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, Dept Phys Semicond & Nanoelect, 29 Polytech Skaya St, St Petersburg 195251, Russia

来源：

4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷

关键词：

D O I：

10.1088/1742-6596/917/6/062038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate surface plasmon-phonon polaritons in n-doped GaAs with the aim to obtain terahertz radiation emission. Dispersion of the surface plasmon-phonon polaritons is theoretically simulated taking into account contributions of the lattice and electron subsystems to the dielectric permittivity of n-GaAs. It is shown that regular grating at outer surface of GaAs provides a possibility to convert surface plasmon-phonon polaritons into terahertz photons and vice versa.

引用

页数：4

共 50 条

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