Pr3+:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

被引：27
|
作者：
Iijima, Kodai [1 ]
Kariyama, Ryosuke [1 ]
Tanaka, Hiroki [1 ]
Kannari, Fumihiko [1 ]
机构：
[1] Keio Univ, Dept Elect & Elect Engn, Kohoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan
来源：
APPLIED OPTICS | 2016年 / 55卷 / 28期
关键词：
SOLID-STATE LASERS; YLF LASER; RED; GENERATION; CRYSTALS; CR4+YAG;
D O I：
10.1364/AO.55.007782
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We attain stable mode-locking of an InGaN laser-diode-pumped Pr3+: YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium. (C) 2016 Optical Society of America
引用
收藏
页码：7782 / 7787
页数：6
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