Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

被引：78

作者：

Jurchescu, Oana D. ^{[1
,2
,3
]}

Hamadani, Behrang H. ^{[1
]}

Xiong, Hao D. ^{[1
]}

Park, Sungkyu K. ^{[2
,3
]}

Subramanian, Sankar ^{[4
]}

Zimmerman, Neil M. ^{[5
]}

Anthony, John E. ^{[4
]}

Jackson, Thomas N. ^{[2
,3
]}

Gundlach, David J. ^{[1
]}

机构：

[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Elect Engn, Mat Res Inst, University Pk, PA 16802 USA

[4] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

[5] NIST, Atom Phys Div, Gaithersburg, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2903508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1/f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel. (C) 2008 American Institute of Physics.

引用

页数：3

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