Coulomb charging effects in an open quantum dot device at zero magnetic field

被引：1
|
作者：
Liang, CT
Simmons, MY
Smith, CG
Kim, GH
Ritchie, DA
Pepper, M
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[3] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[4] ETRI, Telecommun Basic Res Lab, Taejon 305600, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3B期
关键词：
quantum dots; charging; one-dimensional; Coulomb blockade; single-electron tunnelling;
D O I：
10.1143/JJAP.40.1936
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report low-temperature conductance measurements of an open quantum dot device formed in a clean one-dimensional (1D) channel. At zero magnetic field. continuous and periodic oscillations superimposed upon ID ballistic conductance steps are observed. We ascribe the observed conductance oscillations when the conductance through the dot G exceeds 2e(2)/h, to experimental evidence for Coulomb charging effects in an open dot. This is supported by the evolution of the oscillating features for G > 2e(2)/h as a function of both temperature and barrier transparency.
引用
收藏
页码：1936 / 1940
页数：5
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