Burning Graphene Layer-by-Layer

被引:28
|
作者
Ermakov, Victor A. [1 ]
Alaferdov, Andrei V. [1 ]
Vaz, Alfredo R. [1 ]
Perim, Eric [2 ]
Autreto, Pedro A. S. [2 ]
Paupitz, Ricardo [3 ]
Galvao, Douglas S. [2 ]
Moshkalev, Stanislav A. [1 ]
机构
[1] Univ Estadual Campinas, Ctr Semicond Components, BR-13083870 Campinas, SP, Brazil
[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
[3] UNESP, Univ Estadual Paulista, Dept Fis, IGCE, BR-13506900 Rio Claro, SP, Brazil
来源
SCIENTIFIC REPORTS | 2015年 / 5卷
基金
巴西圣保罗研究基金会;
关键词
HYPERTHERMAL ATOMIC OXYGEN; LIQUID-PHASE EXFOLIATION; REACTIVE FORCE-FIELD; MULTILAYER GRAPHENE; BASAL-PLANE; OXIDATION; GRAPHITE; REAXFF; MECHANISM; PLASMA;
D O I
10.1038/srep11546
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in "cold-wall" reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material.
引用
收藏
页数:9
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