The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

被引：6

作者：

Lambert, DJH

Huang, JJ

Shelton, BS

Wong, MM

Chowdhury, U

Zhu, TG

Kwon, HK

Liliental-Weber, Z

Benarama, M

Feng, M

Dupuis, RD ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

[2] Univ Illinois, Ctr Compound Semicond Microelect, Urbana, IL 61801 USA

[3] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷

基金：

美国国家科学基金会;

关键词：

Heterojunction bipolar transistor; aluminum gallium nitride; current gain;

D O I：

10.1016/S0022-0248(00)00808-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described. The "emitter-up" structures are grown on (0 0 0 1) sapphire substrates, Common-emitter characteristics and Gummel plots were measured on 120 x 120 mum(2) devices and useable DC current gains of beta similar to 8-14 were achieved at room temperature. The resistance of the base was a limiting factor in high-current operation of these devices. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：730 / 733

页数：4

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