Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity

被引：8
|
作者：
Kitada, Takahiro [1 ]
Ota, Hiroto [1 ]
Lu, Xiangmeng [1 ]
Kumagai, Naoto [1 ,2 ]
Isu, Toshiro [1 ]
机构：
[1] Univ Tokushima, Grad Sch Sci & Technol, Tokushima 7708506, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058560, Japan
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 11期
基金：
日本学术振兴会;
关键词：
QUANTUM-CASCADE LASERS; TERAHERTZ RADIATION; 2ND-HARMONIC GENERATION; COHERENT;
D O I：
10.7567/APEX.9.111201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) multilayers. InGaAs multiple quantum wells (MQWs) with two different well widths were introduced only in the upper cavity, and sandwiched between p-and n-type DBRs. This current-injection type device exhibited two-color lasing in the near-infrared region under room temperature pulsed conditions. Two-color lasing was achieved when the lower cavity had an optimal thickness relative to the upper cavity thickness and the MQW emission properties. (C) 2016 The Japan Society of Applied Physics
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页数：4
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