Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process

被引：56
|
作者：
Yang, Haifang [1 ]
Jin, Aizi [1 ]
Luo, Qiang [1 ]
Li, Junjie [1 ]
Gu, Changzhi [1 ]
Cui, Zheng [2 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期
基金：
中国国家自然科学基金;
关键词：
electron beam lithography; HSQ/PMMA bilayer resist; negative tone lift-off;
D O I：
10.1016/j.mee.2008.01.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：814 / 817
页数：4
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