Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

被引：0

作者：

Mori, Nobuya ^{[1
]}

Kamakura, Yoshinari ^{[1
]}

Mil'nikov, Genaddy ^{[1
]}

Minari, Hideki ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS | 2011年 / 470卷

关键词：

Silicon; MOSFET; Discrete dopant; Non-equilibrium Green's function; R-matrix; FLUCTUATIONS; MOSFETS;

D O I：

10.4028/www.scientific.net/KEM.470.218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.

引用

页码：218 / 223

页数：6

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