共 50 条
- [21] A crossbar array of magnetoresistive memory devices for in-memory computingNature, 2022, 601 : 211 - 216Seungchul Jung论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyHyungwoo Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySungmeen Myung论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyHyunsoo Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySeung Keun Yoon论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySoon-Wan Kwon论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYongmin Ju论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyMinje Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyWooseok Yi论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyShinhee Han论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyBaeseong Kwon论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyBoyoung Seo论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyKilho Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyGwan-Hyeob Koh论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyKangho Lee论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyYoonjong Song论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyChangkyu Choi论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologyDonhee Ham论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of TechnologySang Joon Kim论文数: 0 引用数: 0 h-index: 0机构: Samsung Electronics,Samsung Advanced Institute of Technology
- [22] A crossbar array of magnetoresistive memory devices for in-memory computingNATURE, 2022, 601 (7892) : 211 - +Jung, Seungchul论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Yoon, Seung Keun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaKwon, Soon-Wan论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaJu, Yongmin论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaKim, Minje论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaYi, Wooseok论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaHan, Shinhee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Foundry Business, Yongin, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaKwon, Baeseong论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Foundry Business, Yongin, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaSeo, Boyoung论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Foundry Business, Yongin, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaLee, Kilho论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, Hwaseong Si, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaKoh, Gwan-Hyeob论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, Hwaseong Si, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaLee, Kangho论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Foundry Business, Yongin, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaSong, Yoonjong论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, Hwaseong Si, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea论文数: 引用数: h-index:机构:Ham, Donhee论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Harvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA Samsung Elect, Samsung Adv Inst Technol, Suwon, South KoreaKim, Sang Joon论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea Samsung Elect, Samsung Adv Inst Technol, Suwon, South Korea
- [23] A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: from mitigation to exploitationFARADAY DISCUSSIONS, 2019, 213 : 487 - 510Payvand, Melika论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, Switzerland Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, SwitzerlandNair, Manu V.论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, Switzerland Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, SwitzerlandMueller, Lorenz K.论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, Switzerland Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, SwitzerlandIndiveri, Giacomo论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, Switzerland Univ Zurich, ETH Zurich, Inst Neurainfarmat, Winterthurerstr 190, CH-8057 Zurich, Switzerland
- [24] Embracing the Unreliability of Memory Devices for Neuromorphic Computing2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,Bocquet, Marc论文数: 0 引用数: 0 h-index: 0机构: Univ Aix Marseille, IM2NP, Marseille, France Univ Toulon & Var, CNRS, Toulon, France Univ Aix Marseille, IM2NP, Marseille, FranceHirtzlin, Tifenn论文数: 0 引用数: 0 h-index: 0机构: Univ Paris Saclay, C2N, CNRS, F-91120 Palaiseau, France Univ Aix Marseille, IM2NP, Marseille, FranceKlein, Jacques-Olivier论文数: 0 引用数: 0 h-index: 0机构: Univ Paris Saclay, C2N, CNRS, F-91120 Palaiseau, France Univ Aix Marseille, IM2NP, Marseille, FranceNowak, Etienne论文数: 0 引用数: 0 h-index: 0机构: Univ Grenoble Alpes, LETI, CEA, Grenoble, France Univ Aix Marseille, IM2NP, Marseille, France论文数: 引用数: h-index:机构:Portal, Jean-Michel论文数: 0 引用数: 0 h-index: 0机构: Univ Aix Marseille, IM2NP, Marseille, France Univ Toulon & Var, CNRS, Toulon, France Univ Aix Marseille, IM2NP, Marseille, FranceQuerlioz, Damien论文数: 0 引用数: 0 h-index: 0机构: Univ Paris Saclay, C2N, CNRS, F-91120 Palaiseau, France Univ Aix Marseille, IM2NP, Marseille, France
- [25] Tunneling magnetoresistance materials and devices for neuromorphic computingMATERIALS FUTURES, 2023, 2 (03):Yao, Yuxuan论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaCheng, Houyi论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Hefei Innovat Res Inst, Anhui High Reliabil Chips Engn Lab, Hefei 230013, Peoples R China Truth Equipment Corp, TREC, Hefei 230013, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaZhang, Boyu论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Hefei Innovat Res Inst, Anhui High Reliabil Chips Engn Lab, Hefei 230013, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaYin, Jialiang论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Beihang Geortek Joint Microelect Inst, Qingdao Res Inst, Qingdao 266061, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaZhu, Daoqian论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaCai, Wenlong论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaLi, Sai论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R ChinaZhao, Weisheng论文数: 0 引用数: 0 h-index: 0机构: Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China Beihang Univ, Hefei Innovat Res Inst, Anhui High Reliabil Chips Engn Lab, Hefei 230013, Peoples R China Beihang Univ, Beihang Geortek Joint Microelect Inst, Qingdao Res Inst, Qingdao 266061, Peoples R China Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China
- [26] Menmristive neuromorphic computing approach combining calibration method and in-memory trainingGuofang Keji Daxue Xuebao/Journal of National University of Defense Technology, 2023, 45 (05): : 202 - 206Du X.论文数: 0 引用数: 0 h-index: 0机构: College of Electronic Science and Technology, National University of Defense Technology, Changsha College of Electronic Science and Technology, National University of Defense Technology, ChangshaPeng J.论文数: 0 引用数: 0 h-index: 0机构: College of Electronic Science and Technology, National University of Defense Technology, Changsha College of Electronic Science and Technology, National University of Defense Technology, ChangshaLiu H.论文数: 0 引用数: 0 h-index: 0机构: College of Electronic Science and Technology, National University of Defense Technology, Changsha College of Electronic Science and Technology, National University of Defense Technology, Changsha
- [27] Emerging 2D Memory Devices for In-Memory ComputingADVANCED MATERIALS, 2021, 33 (29)Yin, Lei论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R ChinaCheng, Ruiqing论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R ChinaWen, Yao论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R ChinaLiu, Chuansheng论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R ChinaHe, Jun论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
- [28] In-Memory Computing Devices and Integrated Chips Based on Chalcogenide Phase Change Materials (Invited)ACTA OPTICA SINICA, 2024, 44 (15)Xu Kai论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaYun Yiting论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaZhang Jiaxin论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaLi Xiang论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaWang Weiquan论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaWei Maoliang论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaLei Kunhao论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaLi Junying论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaLin Hongtao论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Key Lab Micro Nano Elect & Smart Syst Zhejiang Pr, State Key Lab Brain Machine Intelligence, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
- [29] In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access MemoryMATERIALS, 2020, 13 (16)Ou, Qiao-Feng论文数: 0 引用数: 0 h-index: 0机构: Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R ChinaXiong, Bang-Shu论文数: 0 引用数: 0 h-index: 0机构: Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R ChinaYu, Lei论文数: 0 引用数: 0 h-index: 0机构: Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R ChinaWen, Jing论文数: 0 引用数: 0 h-index: 0机构: Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R ChinaWang, Lei论文数: 0 引用数: 0 h-index: 0机构: Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R ChinaTong, Yi论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China
- [30] An organic synaptic transistor with integration of memory and neuromorphic computingJOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (31) : 9972 - 9981Chen, Shaomin论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fujian Sci Technol Innovat Lab Optoelect Informat, Fuzhou 350100, Peoples R China Fuzhou Univ, Zhicheng Coll, Dept Informat Engn, Fuzhou 350002, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaLi, Enlong论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaYu, Rengjian论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaYang, Huihuang论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaYan, Yujie论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaHu, Yuanyuan论文数: 0 引用数: 0 h-index: 0机构: Hunan Univ, Sch Phys & Elect, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaChen, Huipeng论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fujian Sci Technol Innovat Lab Optoelect Informat, Fuzhou 350100, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R ChinaGuo, Tailiang论文数: 0 引用数: 0 h-index: 0机构: Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China Fujian Sci Technol Innovat Lab Optoelect Informat, Fuzhou 350100, Peoples R China Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China