Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier

被引：31

作者：

Yen, Sheng-Horng ^{[1
]}

Tsai, Meng-Lun ^{[1
]}

Tsai, Miao-Chan ^{[2
]}

Chang, Shu-Jeng ^{[2
]}

Kuo, Yen-Kuang ^{[2
]}

机构：

[1] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 24期

关键词：

Light-emitting diodes (LEDs); quantum wells (QWs); semiconductor devices;

D O I：

10.1109/LPT.2010.2085427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.

引用

页码：1787 / 1789

页数：3

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