Excitation of high-intensity laser radiation of semiconductor targets by a subnanosecond electron beam

被引：2

作者：

Yalandin, M. I. ^{[1
]}

Bochkarev, M. B. ^{[1
]}

Shunailov, S. A. ^{[1
]}

Sadykova, A. G. ^{[1
]}

Nasibov, A. S. ^{[2
]}

Bagramov, V. G. ^{[2
]}

Berezhnoi, K. V. ^{[2
]}

Vasil'ev, B. I. ^{[2
]}

机构：

[1] Russia Acad Sci, Inst Electrophys, Ural Branch, Ul Amundsena 106, Ekaterinburg 620016, Russia

[2] Russian Acad Sci, Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2017年 / 60卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

GAS DIODE; GENERATORS;

D O I：

10.1134/S0020441217050116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of the excitation of DdS semiconductor targets by a subnanosecond electron beam (EB) with an electron energy of 60-230 keV are presented. The maximum intensity of laser radiation from targets for a 1-mm EB diameter exceeded 10(7) W/cm(2) at an efficiency of 10%. Lasing was initiated at the leading edge of the EB current; laser radiation then reproduced the shape of the excitation pulse. At low excitation levels, a single-mode lasing regime with the wavelength lambda = 522 nm was observed. The maximum power of laser radiation (10 MW) was achieved on a multielement CdS semiconductor target. The duration of laser pulses changed in the range of 100-500 ps.

引用

页码：710 / 715

页数：6

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