Switchable diode effect in BaZrO3 thin films

被引：10

作者：

Ding, Ying ^{[1
,2
]}

Xu, Xing ^{[2
]}

Bhalla, Amar ^{[3
]}

Yang, Xiubo ^{[1
]}

Chen, Jianghua ^{[1
]}

Chen, Chonglin ^{[2
]}

机构：

[1] Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Elect Microscopy, Changsha 410082, Hunan, Peoples R China

[2] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[3] Univ Texas San Antonio, Dept Elect & Comp Engn, San Antonio, TX 78249 USA

来源：

RSC ADVANCES | 2016年 / 6卷 / 65期

基金：

中国国家自然科学基金;

关键词：

HETEROSTRUCTURES; TRANSPORT; PROPERTY; MEMORY;

D O I：

10.1039/c6ra05668g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resistive switching behaviour and switchable diode effects in BaZrO3 thin film were systematically studied to understand the charge trapping/detrapping behaviour for memory device applications. The switchable diode effect was studied by designing and fabricating a device in the multilayered structure of Ag/BaZrO3/SrRuO3. The as-grown BaZrO3 film shows bi-layered structure, in which the top layer is polycrystalline while the bottom layer grows epitaxially with the SrRuO3. The charge trapping/detrapping at the metal/insulator interface depletion layer was found to be the mechanism in governing the resistance switching effects. Besides, improved retention properties were achieved from the as-designed structures. Interface states caused by grain boundaries are assumed to be the reason. The findings of these diode characters may provide valuable information for the understanding of resistive switching in oxide materials.

引用

页码：60074 / 60079

页数：6

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