Double-sided TOPCon solar cells on textured wafer with ALD SiOx layer

被引：45
|
作者：
Lozac'h, Mickael [1 ]
Nunomura, Shota [1 ]
Matsubara, Koji [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2020年 / 207卷 / 207期
关键词：
Surface passivation; Polycrystalline silicon (poly-Si); Tunnel oxide passivated contact (TOPCon); Silicon oxide (SiOx); Atomic layer deposition (ALD); CARRIER-SELECTIVE CONTACTS; PASSIVATING CONTACTS; ION-IMPLANTATION; REAR CONTACTS; SILICON;
D O I：
10.1016/j.solmat.2019.110357
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Double-sided, front and rear, tunnel oxide passivated contact (TOPCon) of crystalline silicon (c-Si) solar cells on textured wafer is presented. The double-sided TOPCon structure is composed of (p) poly-Si/SiOx/(n) c-Si/SiOx/(n) poly-Si, where the silicon oxide (SiOx) layer is formed by atomic layer deposition (ALD). With a 0.6 +/- 0.1 nm-thick SiOx layer, an 18.8 %-efficiency solar cell is fabricated, where an excellent short circuit current above 39 mA/cm(2) is confirmed for a front grid structure. The solar cell performance is improved by optimizing the boron and hydrogen diffusion profiles near the p-side SiOx/c-Si interface.
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页数：7
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