On the apparent mobility in nanometric n-MOSFETs

被引：45
|
作者：
Zilli, M. [1 ]
Esseni, D. [1 ]
Palestri, P. [1 ]
Selmi, L. [1 ]
机构：
[1] Univ Udine, Dipartimento Ingn Elettr Gest & Maccan, I-33100 Udine, Italy
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 11期
关键词：
ballistic transport; characterization and simulation; mobility; multisubband Monte Carlo (MSMC);
D O I：
10.1109/LED.2007.907553
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter investigates the definition and determination of mobility in nanometric metal-oxide-semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small V-DS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.
引用
收藏
页码：1036 / 1039
页数：4
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