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Nonlinear Hall Effect in Antiferromagnetic Half-Heusler Materials
被引:4
|作者:
Chen, Cheng
[1
]
Wang, Huaiqiang
[1
]
Yang, Zhilong
[1
]
Zhang, Haijun
[1
,2
]
机构:
[1] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
基金:
中国国家自然科学基金;
关键词:
TOPOLOGICAL INSULATORS;
D O I:
10.1088/0256-307X/38/5/057302
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
It has recently been demonstrated that various topological states, including Dirac, Weyl, nodal-line, and triple-point semimetal phases, can emerge in antiferromagnetic (AFM) half-Heusler compounds. However, how to determine the AFM structure and to distinguish different topological phases from transport behaviors remains unknown. We show that, due to the presence of combined time-reversal and fractional translation symmetry, the recently proposed second-order nonlinear Hall effect can be used to characterize different topological phases with various AFM configurations. Guided by the symmetry analysis, we obtain expressions of the Berry curvature dipole for different AFM configurations. Based on the effective model, we explicitly calculate the Berry curvature dipole, which is found to be vanishingly small for the triple-point semimetal phase, and large in the Weyl semimetal phase. Our results not only put forward an effective method for the identification of magnetic orders and topological phases in AFM half-Heusler materials, but also suggest these materials as a versatile platform for engineering the nonlinear Hall effect.
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页数:6
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