Post Soft Breakdown conduction in SiO2 gate oxides

被引：60
|
作者：
Suñé, J [1 ]
Miranda, E [1 ]
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain
来源：
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年
关键词：
D O I：
10.1109/IEDM.2000.904373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The post Soft Breakdown (SBD) conduction in ultra-thin SiO2 films is studied using a Quantum Point Contact model which also applies to hard breakdown. The main experimental characteristics of the post-SBD conduction are correctly explained. The role of holes and electrons is also discussed.
引用
收藏
页码：533 / 536
页数：4
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