Post Soft Breakdown conduction in SiO2 gate oxides

被引：60

作者：

Suñé, J ^{[1
]}

Miranda, E ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The post Soft Breakdown (SBD) conduction in ultra-thin SiO2 films is studied using a Quantum Point Contact model which also applies to hard breakdown. The main experimental characteristics of the post-SBD conduction are correctly explained. The role of holes and electrons is also discussed.

引用

页码：533 / 536

页数：4

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