Near-infrared near-field imaging spectroscopy of semiconductor quantum structures for optical communication devices

被引：0
|
作者：
Saiki, T. [1 ]
Kubota, R. [1 ]
Nakashima, K. [1 ]
Mizuno, D. [1 ]
机构：
[1] Kejo Univ, Kohoku Ku, Kanagawa 2238522, Japan
来源：
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nonuniform distribution of N in GaInNAs alloys was investigated by near-field photoluminescence imaging spectroscopy of localized states driven by giant band-gap reduction due to N incorporation. We observed both strongly localized excitons confined in N clusters and rather delocalized excitons, which indicate the onset of alloy formation.
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页码：383 / 384
页数：2
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