Planar organic photovoltaic cells (OPV) based on the heterojunction subphthalocyanine/fullerene (SubPc/C-60) were fabricated by varying the nature of hole transporting layer (HTL) and the SubPc thickness. The performances of the efficient heterojunction SubPc/C-60 are improved through the use of MoO3/CuI double HTL In comparison with OPV using MoO3 alone as HTL, the insertion of CuI leads to a significant increase in the short circuit current due to improved hole mobility. With the MoO3/CuI HTL, the power conversion efficiency was maximized to nearly 5% at a SubPc thickness of 20 nm. The atomic force microscopy study shows that the morphology of the SubPc films depends on the HTL. With CuI, the SubPc films are more homogeneous, with a smoother surface. These morphology differences induce modifications of the electrical properties of the SubPc. J-V characteristics of hole only devices, i.e. devices with SubPc inserted between two high work function electrodes, show that the hole mobility in SubPc deposited onto CuI is higher than that in films deposited onto MoO3. (C) 2015 Elsevier B.V. All rights reserved.
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Univ Nantes, Nantes Atlantique Univ, LAMP, EA 3825,Fac Sci & Tech, F-44000 Nantes, FranceUniv Nantes, Nantes Atlantique Univ, Inst Mat Jean Rouxel IMN, CNRS,Fac Sci & Tech, F-44000 Nantes, France
Morsli, M.
Dahou, F.
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Univ Oran Es Senia, LPCM2E, Oran, AlgeriaUniv Nantes, Nantes Atlantique Univ, Inst Mat Jean Rouxel IMN, CNRS,Fac Sci & Tech, F-44000 Nantes, France
Dahou, F.
Abe, S. Yapi
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机构:Univ Nantes, Nantes Atlantique Univ, Inst Mat Jean Rouxel IMN, CNRS,Fac Sci & Tech, F-44000 Nantes, France
Abe, S. Yapi
Khelil, A.
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Univ Oran Es Senia, LPCM2E, Oran, AlgeriaUniv Nantes, Nantes Atlantique Univ, Inst Mat Jean Rouxel IMN, CNRS,Fac Sci & Tech, F-44000 Nantes, France
Khelil, A.
Bernede, J. C.
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机构:Univ Nantes, Nantes Atlantique Univ, Inst Mat Jean Rouxel IMN, CNRS,Fac Sci & Tech, F-44000 Nantes, France
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Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, GermanyUniv Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, Germany
Wang, Hai-Qiao
Stubhan, Tobias
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Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, GermanyUniv Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, Germany
Stubhan, Tobias
Osvet, Andres
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Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, GermanyUniv Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, Germany
Osvet, Andres
Litzov, Ivan
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Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, GermanyUniv Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, Germany
Litzov, Ivan
Brabec, Christoph J.
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Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, Germany
Bavarian Ctr Appl Energy Res ZAE Bayern, D-91058 Erlangen, GermanyUniv Erlangen Nurnberg, Inst Mat Elect & Energy Technol I MEET, D-91058 Erlangen, Germany
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South China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China
South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China
Li Yanping
Yu Huangzhong
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South China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China
Yu Huangzhong
Dong Yifan
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China
Dong Yifan
Huang Xinxin
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China