A Comparative Study of Metamodels for Fast and Accurate Simulation of Nano-CMOS Circuits

被引:24
|
作者
Garitselov, Oleg [1 ]
Mohanty, Saraju P. [1 ]
Kougianos, Elias [2 ]
机构
[1] Univ N Texas, Dept Comp Sci & Engn, Denton, TX 76207 USA
[2] Univ N Texas, Dept Elect Engn & Technol, Denton, TX 76207 USA
基金
美国国家科学基金会;
关键词
Circuit simulation; metamodeling; mixed-signal circuits; nanoscale CMOS; statistical sampling; ANALOG; DESIGN;
D O I
10.1109/TSM.2011.2173957
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fast simulation is a bottleneck for design space exploration of complex nanoscale CMOS (nano-CMOS) analog and mixed-signal (AMS) circuits. This paper presents the use of "metamodels" for fast and accurate AMS circuit design exploration. A design process flow that uses metamodels is introduced. Metamodel generation is the most time-consuming step of the design flow. Consequently, accurate and fast sampling of the design space is essential for the creation of the metamodel. Different sampling techniques are investigated to minimize the number of samples required. This paper uses two nanoscale CMOS analog circuits: a 45-nm ring oscillator and a 180-nm LC-VCO, as case studies. It is observed that the parasitics generated from the physical design of the circuits have a drastic effect on their performance metrics, such as frequency. Four alternative sampling techniques, both random [Monte Carlo (MC)] and uniform [Latin hypercube sampling (LHS), middle Latin hypercube sampling (MLHS), and design of experiments (DOEs)], are considered and compared for speed and accuracy. This paper provides a thorough exploration of these sampling techniques to determine which one is more suitable to minimize sampling size for metamodel generation and optimize the design cycle. Experiments show that LHS sampling is best for both circuits, followed by MLHS, MC, and DOE. In this paper, it is also shown that polynomial metamodels of order higher than two (which are commonly used) provide best accuracy.
引用
收藏
页码:26 / 36
页数:11
相关论文
共 50 条
  • [21] Towards a grid-enabled simulation framework for Nano-CMOS electronics
    Han, Liangxiu
    Asenov, Asen
    Berry, Dave
    Millar, Campbell
    Roy, Gareth
    Roy, Scott
    Sinnott, Richard
    Stewart, Gordon
    E-SCIENCE 2007: THIRD IEEE INTERNATIONAL CONFERENCE ON E-SCIENCE AND GRID COMPUTING, PROCEEDINGS, 2007, : 305 - +
  • [22] Atomistic simulation for a nano-CMOS process: From ion implantation to diffusion
    Yoo, Jae-Hyun
    Yoon, Kwan-Sun
    Kim, Joong-Sik
    Won, Taeyoung
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (03) : 1260 - 1265
  • [23] Computational Performance Optimisation for Statistical Analysis of the Effect of Nano-CMOS Variability on Integrated Circuits
    Xie, Zheng
    Edwards, Doug
    VLSI DESIGN, 2013,
  • [24] Geostatistical-inspired fast layout optimisation of a nano-CMOS thermal sensor
    Okobiah, Oghenekarho
    Mohanty, Saraju P.
    Kougianos, Elias
    IET CIRCUITS DEVICES & SYSTEMS, 2013, 7 (05) : 253 - 262
  • [25] Simulation of Proton Induced Single Event Upsets in Bulk Nano-CMOS SRAMs
    Cao, Xuebing
    Xiao, Liyi
    Li, Linzhe
    Li, Jie
    Wang, Tianqi
    17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
  • [26] Bridging Technology-CAD and Design-CAD for Variability Aware Nano-CMOS Circuits
    Harish, B. P.
    Bhat, Navakanta
    Patil, Mahesh B.
    ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5, 2009, : 2309 - +
  • [27] Single-Event Pulse Broadening After Narrowing Effect in Nano-CMOS Logic Circuits
    Huang, Pengcheng
    Chen, Shuming
    Chen, Jianjun
    Liang, Bin
    Liu, Biwei
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (03) : 849 - 856
  • [28] Accurate Polynomial Metamodeling-Based Ultra-Fast Bee Colony Optimization of a Nano-CMOS Phase-Locked Loop
    Garitselov, Oleg
    Mohanty, Saraju P.
    Kougianos, Elias
    JOURNAL OF LOW POWER ELECTRONICS, 2012, 8 (03) : 317 - 328
  • [29] TEMPERATURE-ADAPTIVE ENERGY REDUCTION TECHNIQUES FOR NANO-CMOS CIRCUITS DISPLAYING REVERSED TEMPERATURE DEPENDENCE
    Kumar, Ranjith
    Kursun, Volkan
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2008, 17 (03) : 423 - 438
  • [30] Quantum mechanical and transport aspects of resolving discrete charges in nano-CMOS device simulation
    Asenov, A
    Roy, G
    Alexander, C
    Brown, AR
    Watling, JR
    Roy, S
    2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2004, : 334 - 336