Recent technologies and trends of power devices

被引：6
|
作者：
Majumdar, Gourab
机构：
来源：
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词：
IGBT; IPM; power conversion and power module;
D O I：
10.1109/IWPSD.2007.4472635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, sonic key technologies related to advancement of the IGBT module and IPM family, have been reviewed. Changing requirements from various application fields and projections of future technologies related to power modules that can comply with such needs are also discussed highlighting on newer power chip and packaging technologies. In the final part of the paper, discussions on status and possibilities of silicon carbide based power semiconductors for future power conversion applications are also included.
引用
收藏
页码：787 / 792
页数：6
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