Ultra-low-voltage, low-power, high-speed operational amplifiers using body-driven gain-boosting technique

被引:19
|
作者
Zabihian, S. Alireza [1 ]
Lotfi, Reza [1 ]
机构
[1] Ferdowsi Univ Mashhad, Fac Engn, Integrated Syst Lab, EE Dept, Mashhad, Iran
关键词
D O I
10.1109/ISCAS.2007.377906
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Regular gate-driven regulated-cascode structure fails to operate with very-low supply voltages. On the other hand, body-driven configuration suffers from limited speed due to limited effective transconductance. In this letter, Body-Driven Gain-Boosting amplifier has been employed for a regular gate-driven folded-cascode amplifier to enhance its voltage gain without any limitation on its minimum required supply voltage and voltage swing in ultra-low-voltage applications. The gain/speed/swing performance of the proposed low-voltage Op-Amp would be therefore good enough not to require another amplifying stage in many high-speed low-power applications. Using the proposed architecture, three different sub-1-V singlestage operational amplifiers have been designed and simulated in 0.18-mu m CMOS technology that confirm the suitable operation of the circuit in very-low supply voltages and different speeds.
引用
收藏
页码:705 / 708
页数:4
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