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2D materials for spintronic devices
被引:408
|作者:
Ahn, Ethan C.
[1
]
机构:
[1] Univ Texas San Antonio, Dept Elect & Comp Engn, San Antonio, TX 78249 USA
基金:
美国国家科学基金会;
关键词:
FIELD-EFFECT TRANSISTORS;
MAGNETIC TUNNEL-JUNCTIONS;
ELECTRICAL SPIN INJECTION;
MASSLESS DIRAC FERMIONS;
HIGH-QUALITY GRAPHENE;
ROOM-TEMPERATURE;
GIANT MAGNETORESISTANCE;
VALLEY POLARIZATION;
ORBIT TORQUES;
METAL;
D O I:
10.1038/s41699-020-0152-0
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
2D materials are attractive for nanoelectronics due to their ultimate thickness dimension and unique physical properties. A wide variety of emerging spintronic device concepts will greatly benefit from the use of 2D materials, leading a better way to manipulating spin. In this review, we discuss various 2D materials, including graphene and other inorganic 2D semiconductors, in the context of scientific and technological advances in spintronic devices. Applications of 2D materials in spin logic switches, spin valves, and spin transistors are specifically investigated. We also introduce the spin-orbit and spin-valley coupled properties of 2D materials to explore their potential to address the crucial issues of contemporary electronics. Finally, we highlight major challenges in integrating 2D materials into spintronic devices and provide a future perspective on 2D materials for spin logic devices.
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页数:14
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