Enhanced terahertz response of diluted magnetic semiconductor Zn1-xMnxTe crystals

被引：5
|
作者：
Dong, Jiangpeng [1 ,2 ]
Xu, Yadong [1 ,2 ,3 ]
Ji, Lei-lei [1 ,2 ]
Xiao, Bao [1 ,2 ]
Zhang, Bin-bin [1 ,2 ]
Guo, Lijian [1 ,2 ]
Zhang, Caihong [3 ]
Teichert, Christian [4 ]
Jie, Wanqi [1 ,2 ]
机构：
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
[2] Northwestern Polytech Univ, Key Lab Radiat Detect Mat & Devices, Xian 710072, Shaanxi, Peoples R China
[3] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[4] Mt Univ Leoben, Inst Phys, A-8700 Leoben, Austria
来源：
OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 01期
关键词：
OPTICAL-PROPERTIES; DOPED ZNTE; MN; SPECTROSCOPY; GROWTH;
D O I：
10.1364/OME.8.000157
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single crystalline ZnTe is undoubtedly the leading nonlinear optical material for the promising application of terahertz (THz) generation and detection through optical rectification and electro-optic effect, respectively. In this work, we report the capability of the diluted magnetic semiconductor Zn1-xMnxTe as potential THz emitters and sensors. In Zn1-xMnxTe crystals, a significantly enhanced THz response as high as 10.4%-18.9% (emitter) and 16.9-28.0% (sensor) is observed over intrinsic ZnTe. Both the reduced carrier concentration and the better phase-match condition are proven to be responsible for the enhanced THz emission and detection. The resulting terahertz waves from < 110 > Zn1-xMnxTe reveal an optimum x value of similar to 0.028. The magnetic, optical, and electrical properties of as-grown Zn1-xMnxTe crystals have also been evaluated. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：157 / 164
页数：8
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