Zn1-xMnxTe Diluted Magnetic Semiconductor Nanowires Grown by Molecular Beam Epitaxy

被引：22

作者：

Zaleszczyk, Wojciech ^{[1
]}

Janik, Elzbieta ^{[1
]}

Presz, Adam ^{[2
]}

Dluiewski, Piotr ^{[1
]}

Kret, Slawomir ^{[1
]}

Szuszkiewicz, Wojciech ^{[1
]}

Morhange, Jean-Francois ^{[3
,4
]}

Dynowska, Elzbleta ^{[1
]}

Kirmse, Holm ^{[5
]}

Neumann, Wolfgang ^{[5
]}

Petroutchik, Aleksy ^{[1
]}

Baczewski, Lech T. ^{[1
]}

Karczewski, Grzegorz ^{[1
]}

Wojtowicz, Tomasz ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst High Pressure Phys UNIPRESS, PL-01142 Warsaw, Poland

[3] Univ Paris 06, Inst Nanosci Paris, CNRS, UMR 7588, F-75015 Paris, France

[4] Univ Paris 07, Inst Nanosci Paris, CNRS, UMR 7588, F-75015 Paris, France

[5] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

NANO LETTERS | 2008年 / 8卷 / 11期

关键词：

D O I：

10.1021/nl802449g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn1-xMnxTe NWs with manganese content up to x = 0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn2+ ions in the cation substitutional sites of the ZnTe matrix of the NWs.

引用

页码：4061 / 4065

页数：5

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