Self-Organized Ferroelectric Domains Controlled by a Constant Bias from the Atomic Force Microscopy Tip

被引:10
|
作者
Ma, He [1 ]
Yuan, Guoliang [1 ]
Wu, Tom [2 ]
Wang, Yaojin [1 ]
Liu, Jun-Ming [3 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China
[2] UNSW, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric domain; polarization; crystal anisotropy; surface charges; piezoresponse force microscopy; THIN-FILMS; SULFATE; CHARGE; LINBO3; FIELD;
D O I
10.1021/acsami.8b13982
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The ferroelectric polarization switching along an external electric field is most important for the applications 180 of ferroelectric memories and piezoelectric sensors and actuators; however, the depolarization commonly occurs randomly and cannot be controlled exactly until now. Here, a tip bias introduces the polarization switching and a similar to 10 mu m scale domain in a triglycine sulfate crystal, and then the polarization backswitching as a special depolarization introduces a series of ordered granular domains along a line being parallel to the c axis and through the tip which divides the original domain to two similar parts. Such backswitching is controlled by the surface charge change as a result of the interplay among polarization charges, mobile H+ ions at the surface, and the strong crystal anisotropy. The self-organized ferroelectric domains offer us a new freedom to design novel ferroelectric or piezoelectric devices in future.
引用
收藏
页码:40911 / 40917
页数:7
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