Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs

被引：1
|
作者：
Rubin, ME [1 ]
Blank, HR [1 ]
Chin, MA [1 ]
Kroemer, H [1 ]
Narayanamurti, V [1 ]
机构：
[1] Univ Calif Santa Barbara, Ctr Quantized Elect Struct, Santa Barbara, CA 93106 USA
来源：
PHYSICA E | 1998年 / 2卷 / 1-4期
关键词：
ballistic electron emission microscopy; GaSb; self-assembled quantum dots;
D O I：
10.1016/S1386-9477(98)00139-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Individual GaSb self-assembled quantum dots in a GaAs matrix are imaged and probed using ballisitic electron emission microscopy (BEEM). The nanometer scale lateral resolution of BEEM enables one to inject carriers directly into a single dot and therefore perform local transport measurements without electrically contacting the individual dot. Comparison of BEEM spectra on and off of a dot yields a local conduction band offset between GaSb dots and GaAs of 0.08 +/- .02 eV. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：682 / 684
页数：3
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