A physics-based MTO model for circuit simulation

被引：0

作者：

Bai, YM ^{[1
]}

Huang, AQ ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, CPES, Blacksburg, VA 24061 USA

来源：

PESC 2000: 31ST ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents ii comprehensive model of the MTO (MOS Turn-off Thyristor) based on the lumped-charge modeling technique. The model includes important effects such as avalanche breakdown, Anger recombination and conductivity modulation. The thermal effect is also included in this model. The model is implemented as ii MAST template in the Saber simulator and is compared with numerical simulation.

引用

页码：251 / 257

页数：7

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