Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

被引：0
|
作者：
Biolek, Dalibor [1 ,2 ]
Biolkova, Viera [1 ,2 ,3 ]
Kolka, Zdenek [3 ]
机构：
[1] Univ Def, Dept Elect Engn, Brno, Czech Republic
[2] Brno Univ Technol, Dept Microelect, Brno, Czech Republic
[3] Brno Univ Technol, Dept Radio Elect, Brno, Czech Republic
来源：
2017 14TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD) | 2017年
关键词：
memristor; tunnel effect; Pickett's model; SPICE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.
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页数：4
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