Effect of UV radiation on the relaxation characteristics of ferroelectric thin-film capacitors

被引：3

作者：

Vasilevskii, A. M. ^{[1
]}

Volpyas, V. A. ^{[1
]}

Kozyrev, A. B. ^{[1
]}

Konoplev, G. A. ^{[1
]}

机构：

[1] St Petersburg State Elect Univ, St Petersburg 197376, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 07期

关键词：

D O I：

10.1134/S1063785008070079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of UV radiation with a wavelength near the fundamental absorption edge on the relaxation characteristics of ferroelectric capacitors based on thin (Ba,Sr)TiO3 (BSTO) films has been studied. The absorption spectra of BSTO films with thicknesses up to 1 mu m obtained by RF magnetron sputtering on sapphire substrates have been measured in a 300-600 nm wavelength range, the UV radiation penetration depth in this material was determined, and the optical bandgap width was evaluated. It is established that UV irradiation leads to a significant decrease in the relaxation time of the residual capacitance of BSTO-film-based structures. A minimum relaxation time is achieved upon the irradiation in a 350-360 nm wavelength interval.

引用

页码：561 / 564

页数：4

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