High-Performance and Low-Power Polycrystalline MoTe2 Thin Film Transistors with Solution-Processed Ternary Oxide High-k Dielectric

Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show appealing prospects in thin film transistors (TFTs)-based applications, while still suffer from insufficient demonstration. Herein, the authors systematically report high-performance and low-power chemical vapor deposition-grown polycrystalline molybdenum ditelluride (MoTe2) TFTs with solution-processed ternary Hf0.5Zr0.5O2/HfAlO2 high-k dielectric. Benefitting from the optimized high quality HfAlO2 film synthesis and proper postannealing treatment, the constructed MoTe2 TFTs exhibit a high mobility approximate to 27.24 cm(2) V-1 S-1, a current on/off ratio approximate to 6.43 x 10(5), threshold voltage approximate to-3.27 V, and subthreshold swing (SS) value approximate to 152.4 mV dec(-1), respectively. Moreover, by supplementing another solution-processed layer of ferroelectric Hf0.5Zr0.5O2 to form double layer of HfAlO2/Hf0.5Zr0.5O2 dielectric, the device performance can be further improved with an ignorable hysteresis, increased mobility of approximate to 55.53 cm(2) V-1 S-1, and significantly reduced SS value of approximate to 110.16 mV dec(-1), respectively. The current investigation offers a feasible strategy to fabricate high-performance and low-power MoTe2 TFTs for potential TMDs-based TFTs applications.