Solution-Processed Indium-Zinc-Oxide Thin Film Transistors With High-k Magnesium Titanium Oxide Dielectric

被引：9

作者：

Yang, Zhao ^{[1
]}

Pu, Haifeng ^{[1
]}

Cui, Can ^{[1
]}

Zhang, Li ^{[1
]}

Dong, Chengyuan ^{[2
]}

Zhang, Qun ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Natl Engn Lab TFT LCD Mat & Technol, Shanghai 200433, Peoples R China

[2] Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Dielectric layer; indium-zinc-oxide (IZO); magnesium-titanium-oxide (MTO); magnesium doping; thin-film transistors (TFTs); GATE INSULATORS; DIOXIDE;

D O I：

10.1109/LED.2014.2311117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, magnesium-titanium oxide (MTO) thin films were prepared through a solution-processing method. Variation of permittivity, leakage properties, and optical bandgap of the MTO thin films with different Ti content were investigated. The amorphous indium-zinc oxide thin-film transistors (TFTs) using Mg0.6Ti0.4O as gate dielectric exhibited a small subthreshold swing of 0.32 V/decade, moderate field-effect mobility of 3.41 cm(2)/Vs, low threshold voltage of -0.9 V, and large ON/OFF current ratio of similar to 6x10(6). These results demonstrate the potential application of solution-processed MTO thin films as a promising gate dielectric layer in oxide-TFTs.

引用

页码：557 / 559

页数：3

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