High-pressure studies of photoluminescence in porous silicon

被引：8

作者：

Papadimitriou, D ^{[1
]}

Raptis, YS

Nassiopoulou, AG

机构：

[1] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece

[2] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.58.14089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman scattering and photoluminescence measurements performed on porous silicon at high hydrostatic pressures up to 21 GPa indicate that the phase-transition pressure in this material is porosity dependent and much higher than in bulk crystalline silicon. For porosities higher than 80% the phase transition occurs at 18 GPa followed by unrecoverable suppression of both Raman and luminescence activity. The obtained results are consistent with the quantum-confinement model. [S0163-1829(98)02745-3].

引用

页码：14089 / 14093

页数：5

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[21] HIGH-PRESSURE OXIDATION OF SILICON
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