High-pressure studies of photoluminescence in porous silicon

Raman scattering and photoluminescence measurements performed on porous silicon at high hydrostatic pressures up to 21 GPa indicate that the phase-transition pressure in this material is porosity dependent and much higher than in bulk crystalline silicon. For porosities higher than 80% the phase transition occurs at 18 GPa followed by unrecoverable suppression of both Raman and luminescence activity. The obtained results are consistent with the quantum-confinement model. [S0163-1829(98)02745-3].