Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

被引：234
|
作者：
Hashizume, T [1 ]
Ootomo, S [1 ]
Hasegawa, H [1 ]
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 14期
关键词：
D O I：
10.1063/1.1616648
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The analysis on transient currents for the air-exposed and H-2-plasma-treated devices showed that N-vacancy-related near-surface traps play an important role in current collapse in AlGaN/GaN HFETs. An Al2O3-based surface passivation scheme including an N-2-plasma surface treatment was proposed and applied to an insulated-gate HFET. A large conduction-band offset of 2.1 eV was achieved at the Al2O3/Al0.3Ga0.7N interface. No current collapse was observed in the fabricated Al2O3 insulated-gate HFETs under both drain stress and gate stress. (C) 2003 American Institute of Physics.
引用
收藏
页码：2952 / 2954
页数：3
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