Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

被引：0
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作者：
Wang, Chengxin [1 ]
Maeda, Narihiko [1 ]
Hiroki, Masanobu [1 ]
Yokoyama, Haruki [1 ]
Watanabe, Noriyuki [1 ]
Makimoto, Toshiki [2 ]
Enoki, Takotoino [1 ]
Kobayashi, Takashi [1 ]
机构：
[1] NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
[2] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 1 A期
关键词：
On the basis of the thin barrier surface (TSB) model; the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices. © 2006 The Japan Society of Applied Physics;
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