Phonon and Structural Changes in Deformed Bernal Stacked Bilayer Graphene

被引：68

作者：

Frank, Otakar ^{[1
,2
]}

Bousa, Milan ^{[1
,3
]}

Riaz, Ibtsam ^{[4
]}

Jalil, Rashid ^{[4
]}

Novoselov, Kostya S. ^{[4
]}

Tsoukleri, Georgia ^{[2
,5
]}

Parthenios, John ^{[2
]}

Kavan, Ladislav ^{[1
]}

Papagelis, Konstantinos ^{[2
,6
]}

Galiotis, Costas ^{[2
,6
]}

机构：

[1] AS CR, J Heyrovsky Inst Phys Chem, Vvi, Prague 8, Czech Republic

[2] Fdn Res & Technol Hellas FORTH ICE HT, Inst Chem Engn & High Temp Chem Proc, Patras, Greece

[3] Charles Univ Prague, Fac Sci, Dept Inorgan Chem, Prague 2, Czech Republic

[4] Univ Manchester, Sch Phys & Astron, Manchester, Lancs, England

[5] Univ Patras, Interdept Programme Polymer Sci & Technol, Patras, Greece

[6] Univ Patras, Dept Mat Sci, Patras, Greece

来源：

NANO LETTERS | 2012年 / 12卷 / 02期

基金：

欧洲研究理事会;

关键词：

Bilayer graphene; Raman spectroscopy; strain; tension; band gap; ELECTRONIC-STRUCTURE; MONOLAYER; STRAIN;

D O I：

10.1021/nl203565p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band gap engineering, providing an alternative route to induce the formation of a band gap.

引用

页码：687 / 693

页数：7

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