Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

被引：35

作者：

Chon, U ^{[1
]}

Jang, HM

Lee, SH

Yi, GC

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, POSTECH, Natl Res Lab Ferroelect Phase Transit, NRL, Pohang 790784, South Korea

[3] Res Inst Ind Sci & Technol, RIST, Pohang 790330, South Korea

来源：

JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 11期

关键词：

D O I：

10.1557/JMR.2001.0431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26-28 muC/cm(2) and the coercive field of 50-75 KV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.

引用

页码：3124 / 3132

页数：9

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