Analysis of Low-Frequency Noise in Quantum Dot/Metal-Oxide Phototransistors With Metal Chalcogenide Interfaces

被引：5
|
作者：
Kim, Jaehyun [1 ,2 ]
Kim, Myung-Gil [3 ]
Facchetti, Antonio [1 ,2 ]
Park, Sung Kyu [4 ]
机构：
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[4] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Low-frequency noise; quantum dots; metal chalcogenide ligands; metal-oxide semiconductors; phototransistors; 1/F NOISE; NANOMATERIALS; DEVICES;
D O I：
10.1109/LED.2022.3189605
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise measurements are carried out to investigate optoelectronic characteristics of CdSe quantum dot (QD)/indium-gallium-zinc-oxide (IGZO) heterostructured hybrid phototransistor with respect to various QD surface ligands, such as chalcometallate ligands (Sn2S64- and Sn2Se64-) and thiocyanate (SCN-). It is found that Sn2S64- and Sn2Se64--capped QD/IGZO phototransistors show enhanced optoelectronic characteristics such as responsivity (R) of 3.06 x 10(3) A W-1 and 8.8 x 10(2) A W-1, respectively, and photodetectivity (D*) of 2.1 x 10(13) Jones and 6.18 x 10(11) Jones, respectively, compared with SCN--capped CdSe QD/IGZO phototransistors ( R of 1.21 x 10(3) A W-1 and D* of 2.02 x 10(11) Jones). Independently, all these devices exhibit 1/f low-frequency noise dependence in the subthreshold, ohmic, and saturation regimes. In particular, in the ohmic and saturation regime, the low-frequency noise properties follow the bulk mobility fluctuation mechanism for the chalcometallate ligands-based devices, while carrier number fluctuation model is dominant for the SCN--based devices. Thus, low-frequency noise analysis may provide meaningful information to evaluate important parameters for nanomaterial-based optoelectronics.
引用
收藏
页码：1499 / 1502
页数：4
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