Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources

被引：1

作者：

Faye, David ^{[1
]}

Lallier, Eric ^{[1
]}

Grisard, Arnaud ^{[1
]}

Gerard, Bruno ^{[1
]}

Kieleck, Christelle ^{[2
]}

Hirth, Antoine ^{[2
]}

机构：

[1] Thales Res & Technol, RD 128, F-91767 Palaiseau, France

[2] ISL Inst Franco Allemand Rech St Louis, F-68301 St Louis, France

来源：

OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV | 2007年 / 6740卷

关键词：

gallium arsenide (GaAs); nonlinear optical materials; quasi-phasematching technique (QPM); oscillator parametric optic (OPO);

D O I：

10.1117/12.737110

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nonlinear optical materials play a key role in the development of coherent sources of radiation as they permit the frequency conversion of mature solid-state lasers into spectral ranges where lasers do not exist or perform poorly. The availability of efficient quasi-phasematched infrared materials is thus considered as important for the development of several defense optronics applications. This paper will review the recent progresses we achieved with thick Orientation Patterned-GaAs structures. We will present results obtained in growing thick-layer (500 gm) on 2 cm long structures with very low optical losses (less than 0.02 cm(-1)). This loss coefficient is low enough to allow the realization of a high power OPO in the MIR band.

引用

页数：7

共 36 条

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