Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources

被引:1
|
作者
Faye, David [1 ]
Lallier, Eric [1 ]
Grisard, Arnaud [1 ]
Gerard, Bruno [1 ]
Kieleck, Christelle [2 ]
Hirth, Antoine [2 ]
机构
[1] Thales Res & Technol, RD 128, F-91767 Palaiseau, France
[2] ISL Inst Franco Allemand Rech St Louis, F-68301 St Louis, France
关键词
gallium arsenide (GaAs); nonlinear optical materials; quasi-phasematching technique (QPM); oscillator parametric optic (OPO);
D O I
10.1117/12.737110
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nonlinear optical materials play a key role in the development of coherent sources of radiation as they permit the frequency conversion of mature solid-state lasers into spectral ranges where lasers do not exist or perform poorly. The availability of efficient quasi-phasematched infrared materials is thus considered as important for the development of several defense optronics applications. This paper will review the recent progresses we achieved with thick Orientation Patterned-GaAs structures. We will present results obtained in growing thick-layer (500 gm) on 2 cm long structures with very low optical losses (less than 0.02 cm(-1)). This loss coefficient is low enough to allow the realization of a high power OPO in the MIR band.
引用
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页数:7
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