Study on the growth mechanism of Bi-2212 ribbon-like thin films on flat Ag substrate by the atomization technique

被引:0
|
作者
Su, YJ
Arisawa, S
Takano, Y
Ishii, A
Hatano, T
Togano, K
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
关键词
Ag thin film substrate; atomization technique; high temperature microscope;
D O I
10.1016/S0026-2692(03)00095-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The growth mechanism of Bi-2212 ribbon-like thin films on flat Ag substrate using an atomization technique was studied. The fine Bi-2212 powders were dispersed on the Ag substrate before the melting process, so as to avoid the change in the composition of the molten phase with distance, which would result in the formation of the impurity phases. Nearly reversible peritectic reaction on cooling causes the formation of well-defined Bi-2212 phase. Based on the results of in situ high temperature microscope observation, the wetting of the molten phase to the growing ribbons was identified as the essential condition for the growth of the ribbon-like thin films. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:679 / 681
页数:3
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